BUV298AV npn transistor power module n high current power bipolar module n very low r th junction case n specified accidental overload areas n insulated case (2500v rms) n easy to mount n low internal parasitic inductance industrial applications: n motor control n smps & ups n welding equipment internal schematic diagram october 2001 isotop pin 4 not con nected absolute maximum ratings symbol parameter value unit v cev collector-emitter voltage (v be = -5 v) 1000 v v ceo(sus) collector-emitter voltage (i b = 0) 450 v v ebo emitter-base voltage (i c =0) 7 v i c collector current 50 a i cm collector peak current (t p =10ms) 75 a i b base current 10 a i bm base peak current (t p =10ms) 16 a p tot total dissipation at t c =25 o c 250 w t stg storage temperature -55 to 150 o c t j max. operating junction temperature 150 o c v iso insulation withstand voltage (ac-rms) 2500 o c ? 1/7
thermal data r thj-case r thc-h thermal resistance junction-case max thermal resistance case-heatsink with conductive grease applied max 0.5 0.05 o c/w o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cer collector cut-off current (r be =5 w ) v ce =v cev v ce =v cev t j =100 o c 0.4 2 ma ma i cev collector cut-off current (v be =-5v) v ce =v cev v ce =v cev t j =100 o c 0.4 2 ma ma i ebo emitter cut-off current (i c =0) v eb =5v 2 ma v ceo(sus ) * collector-emitter sustaining voltage i c =0.2a l=25mh v clamp = 450 v 450 v h fe * dc current gain i c =32a v ce =5v 12 v ce(sat) * collector-emitter saturation voltage i c =32a i b =6.4a i c =32a i b =6.4a t j =100 o c 0.35 0.6 1.2 2 v v v be(s at) * base-emitter saturation voltage i c =32a i b =6.4a i c =32a i b =6.4a t j =100 o c 1 0.9 1.5 1.5 v v di c /dt rate of rise of on-state collector v cc =300v r c =0 t p =3 m s i b1 =9.6a t j =100 o c 160 210 a/ m s v ce (3 m s) collector-emitter dynamic voltage v cc = 300 v r c =9.3 w i b1 =9.6a t j =100 o c 4.5 8 v v ce (5 m s) collector-emitter dynamic voltage v cc = 300 v r c =9.3 w i b1 =9.6a t j =100 o c 2.5 4 v t s t f t c storage time fall time cross-over time i c =32a v cc =50v v bb =-5v r bb =0.39 w v clamp =450 v i b1 = 6.4 a l=78 m ht j =100 o c 2.2 0.2 0.45 4.5 0.4 0.7 m s m s m s v cew maximum collector emitter voltage without snubber i cwoff =48a i b1 =6.4a v bb =-5v v cc =50v l=52 m hr bb =0.39 w t j =125 o c 450 v * pulsed: pulse duration = 300 m s, duty cycle 1.5 % BUV298AV 2/7
safe operating areas derating curve collector emitter saturation voltage thermal impedance collector emitter voltage versus base emitter resistance base emitter saturation voltage BUV298AV 3/7
reverse biased soa reverse biased aoa switching times inductive load forward biased soa forward biased aoa switching times inductive load versus temperature BUV298AV 4/7
(1) fast electronics switch (2) non-inductive load dc current gain turn-on switching test circuit turn-on switching waveforms turn-off switching test circuit (1) fast electronic switch (2) non-inductive loa d (3) fast recovery rectifier turn-off switching waveforms BUV298AV 5/7
dim. mm inch min. typ. max. min. typ. max. a 11.8 12.2 0.465 0.480 a1 8.9 9.1 0.350 0.358 b 7.8 8.2 0.307 0.322 c 0.75 0.85 0.029 0.033 c2 1.95 2.05 0.076 0.080 d 37.8 38.2 1.488 1.503 d1 31.5 31.7 1.240 1.248 e 25.15 25.5 0.990 1.003 e1 23.85 24.15 0.938 0.950 e2 24.8 0.976 g 14.9 15.1 0.586 0.594 g1 12.6 12.8 0.496 0.503 g2 3.5 4.3 0.137 1.169 f 4.1 4.3 0.161 0.169 f1 4.6 5 0.181 0.196 p 4 4.3 0.157 0.169 p1 4 4.4 0.157 0.173 s 30.1 30.3 1.185 1.193 p093a isotop mechanical data BUV298AV 6/7
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com BUV298AV 7/7
|
